bulk voltage
英 [bʌlk ˈvəʊltɪdʒ]
美 [bʌlk ˈvoʊltɪdʒ]
网络 体电压; 高电压
双语例句
- Effect of bulk bias voltage and oxygen partial pressure on optical spectrum of ITO film is studied.
研究了基体偏压和氧分压强影响ITO膜光谱的机理。 - Traditional textbook considers that the maximal current instantaneous value occurs in three-phase short circuit of Infinite bulk electrical power system only when the phase voltage instantaneous value is zero and there is no load before short circuit.
现行电力系统分析教材未经过严格证明，就认为短路前空载且该相电压瞬时值为零，是无穷大电源有最大三相短路电流瞬时值的条件。 - The circuit proposed don't need capacitor to keep bulk voltage level and actual efficiency reaches 90% or above.
而且在不需要附加的电容来保持衬底电位的同时，可以使实际的效率值最高达90%以上。 - As compared to bulk SiGe-HBT, SiGe HBT on the isolated type substrate have a higher Early voltage, maximum oscillation frequency, and breakdown voltage.
与普通硅衬底相比，采用绝缘型衬底制备SiGeHBT可以获得较高的基极-集电极击穿电压，较高的厄利电压和最大震荡频率。 - Based on the bulk driven PMOS transistor, a low voltage CMOS cascade current mirror ( BDCCM) is presented, then the input/ output impedance and frequency characteristics are discussed.
基于衬底驱动PMOS晶体管设计了低压PMOS衬底驱动CMOS共源共栅电流镜电路（BDCCM），并讨论分析了其输入阻抗、输出阻抗和频率特性。 - It is applicable in ultra-low voltage by applying signals to the bulk terminals of the complementary input differential pairs, so as to avoid the constraint of threshold voltage of MOSFET.
在互补输入差分对的衬底端施加信号，避开MOSFET阈值电压的限制，以达到超低压应用。 - A new rapid method for determining bulk generation lifetime and surface genera-tion velocity is suggested on the basis of the analysis of a MOS capacitance C-t tran-sient response to a linear voltage sweep.
本文分析了线性电压扫描下MOS电容的C-t瞬态响应，在此基础上，发展了一种快速确定体产生寿命和表面产生速度的新方法。 - With various parasitic capacitors and the bulk effect of the threshold voltage of MOSFET in consideration, a quantitative expression is derived for the sensitivity of S/ R amplifier in LSI single-transistor-cell DRAM as a function of the materials, technology and circuit parameters.
本文考虑了晶体管各种寄生电容和阈值衬底调制效应，导出了单管动态RAM中S/R放大器检测灵敏度与材料、工艺、电路参数间的定量关系。 - Experiments of bulk doping were developed to improve the surface holdoff voltage of alumina insulators.
为改善氧化铝陶瓷绝缘子的沿面耐压能力开展体掺杂实验研究。 - Improving the Bulk Voltage Drop in the Thin Emitter Region of Thin Emitter Thyristors by the Polysilicon Film
改善晶闸管薄发射区体压降的研究 - When the switch is turned off, the scheme can operate and transfer part of the energy stored in the boost inductor to the bulk output capacitor, which can alleviate the surge voltage and clamp the inductor voltage to the reflected output voltage.
在开关管关断时，反激整流二级管导通，将升压电感中存储的部分能量传输到输出电容，从而限制了升压电感两端的电压，达到箝位的目的。 - With small bulk, voltage stabilization, without pollution, weight light, discharge capability high and maintenance quantity light characteristics, VRLA becomes the first selection in communication power supply since ninety era.
从20世纪90年代开始，阀控式密封蓄电池以其体积小、电压稳定、无污染、重量轻、放电性能高、维护量小等特点，而成为通信电源系统首选电池。 - This paper introduces the principle of crosscorrelation measurement of non-homogeneous bulk material flow in pipeline and the capacitance sensor applying to sampling the random flow noise and concentration signal. A capacitance/ voltage converter was developed.
本文介绍了互相关法测量管道输送非均匀离散物料的原理和电容传感器用于采集随机流动噪声和浓度信号的理论，研制了相应的电容&电压转换器。 - Bulk high-speed traveling wave E-O modulator was also fabricated, the half-wave voltage is just 760 V, response time of the device is low up to 297 ps.
此外，用本实验的KTP晶体制作了体式高速行波电光调制器，半波电压760V，脉冲响应时间快到297ps。 - The design and fabrication of high-voltage power devices with avalanche breakdown bulk characteristic under high temperature needs to carefully control the breakdown voltage stability and surface characteristic of the devices as the power rate increases.
具有雪崩体特性击穿的高温高压大功率硅器件的设计和制造，需要对器件的耐压稳定性和表面特性进行细致地控制以获得优良特性。 - Determination of Minority Carrier Bulk Generation Lifetime and Surface Generation Velocity from Constant Current Voltage Transient Measurement of an MOS Capacitor
利用MOS恒流电压瞬态特性测定半导体少子的体产生寿命及表面产生速度 - The blocking capability of planar power electronic devices is analyzed using junction termination structure with field limiting ring and the P+ I ( N-) N+ structure of supporting bulk breakdown voltage.
利用场限环终端结构及P+I（N-）N+体耐压结构分析了平面型电力电子器件的阻断能力。 - Comparison of the voltage spectrums between Zeta mode three-level, Buck and Cuk two-level ac/ ac direct converter verifies that three-level can get a better spectrum, so it can reduce the bulk of the filter and improve the quality of output voltage.
又对比分析了Zeta式三电平、两电平Buck和Cuk交-交变换器的电压频谱结构，证明了三电平技术改善了变换器频谱结构，可减小滤波器的体积和重量，提高输出波形质量。